Modulators – Amplitude modulator – Nonlinear device controlled by modulating signal
Patent
1983-12-02
1985-06-25
Moskowitz, Nelson
Modulators
Amplitude modulator
Nonlinear device controlled by modulating signal
357 16, 357 17, H01L 3302, G02B 514
Patent
active
045256870
ABSTRACT:
A semiconductor apparatus is provided. The apparatus has a multiple layer heterostructure having first and second material layers having first and second bandgaps, respectively and a semiconductor layer of a third bandgap being fabricated between said material layers, the bottom of the conduction band of said semiconductor layer is below the bottom of the conduction band of said material layers, and the top of the valence band of said semiconductor layer is above the top of the valence band of said material layers, the thickness of said semiconductor layer is chosen sufficient for carrier confinement effects within said semiconductor layer to influence the optical properties of said multiple layer heterostructure, and means for applying an electric field to the multiple layer heterostructure in order to vary an optical absorption coefficient and an index of refraction of the multiple layer heterostructure in response to the electric field. The apparatus is adapted for use as an optical absorption modulator or optical phase modulator, or as an electrically tuned Fabry-Perot cavity or as a polarization modulator, or as a nonlinear or bistable apparatus in which the operating point is varied by application of an electric field.
REFERENCES:
patent: 3611207 (1970-01-01), Klahr
patent: 3791717 (1974-02-01), Honda
patent: 3982207 (1976-09-01), Dingle et al.
patent: 3982267 (1976-09-01), Henry
patent: 3991383 (1976-08-01), Hughes et al.
patent: 4080617 (1978-03-01), Dyment
patent: 4093345 (1978-06-01), Logan et al.
patent: 4114257 (1978-09-01), Bellavonce
patent: 4145121 (1979-03-01), Hata et al.
patent: 4205329 (1980-05-01), Dingle et al.
patent: 4208667 (1980-06-01), Chang et al.
patent: 4261771 (1981-04-01), Dingle et al.
patent: 4352116 (1982-09-01), Yariv et al.
patent: 4365260 (1982-12-01), Halonyak
patent: 4383269 (1983-05-01), Capasso
patent: 4385309 (1983-05-01), Quisser et al.
patent: 4398963 (1983-08-01), Stall et al.
F. Capasso et al., "Enhancement of Electron Impactionization in a Superlattice: a New Avalanche Photodiode with a Large Ionization Rate Rate Ratio", Applied Physics Letters 40(1), Jan. 1, 1982, pp. 38-40.
Lee et al., "InGaAs/InP PIN Punch-Through Photodiodes", Electronics Letters, vol. 17, No. 12, Jun. 11, 1981, pp. 431-432.
K. Ahmad et al., "Gallium Indium Arsenide Photodiodes", Solid State Electronics, vol. 22, 1979, pp. 327-333.
J. Applied Physics, vol. 53, No. 10, Oct. 1982, p. R150-J. S. Blakemore.
Applied Physics Letters, vol. 41, Oct. 1982, p. 679-Miller et al.
Applied Physics Letters, vol. 41, Sep. 1982, p. 476-Olego et al.
Chemla Daniel S.
Damen Theodoor C.
Gossard Arthur C.
Miller David A. B.
Wood Thomas H.
AT&T Bell Laboratories
Moskowitz Nelson
Ranieri Gregory C.
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