High speed lateral bipolar transistor

Details High speed lateral bipolar transistor High speed lateral bipolar transistor

1980-04-17

1981-03-31

Larkins, William D.

357 59, 357 67, 357 89, H01L 2904, H01L 2972

Patent

active

042596807

ABSTRACT:
A bipolar transistor NPN structure (20) is constructed at a major surface of a silicon body with a P-type polycrystalline silicon electrode (13) contacting a P-type base zone (13.6). Excess acceptor impurities from the polycrystalline silicon electrode (13) are diffused into the base zone (13.6) in order to tailor its conductivity profile.

REFERENCES:
patent: 3427513 (1969-02-01), Hilbiber
patent: 4016587 (1977-04-01), DeLaMoneda
patent: 4076556 (1978-02-01), Agraz-Geurena et al.
patent: 4160991 (1979-07-01), Anantha et al.
patent: 4188707 (1980-02-01), Asano et al.
patent: 4205333 (1980-05-01), Yamamoto
Gray et al, Analysis & Design of Analog Integrated Circuits, pp. 91-95, Wiley, N.Y., 1977.

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