High speed ion beam switching arrangement for use in the product

Details High speed ion beam switching arrangement for use in the product High speed ion beam switching arrangement for use in the product

1974-05-20

1976-07-20

Smith, Alfred E.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250281, 250292, H01J 3700

Patent

active

039708543

ABSTRACT:
An arrangement for high speed ion beam switching in the production of determinate implantation doses for the doping, by ion implantation, in solid bodies, in which an electrode, preferably a diaphragm is interposed in the path of an ion beam from an ion source, and to which a potential is intermittently connected and disconnected in a controlled manner, to produce a potential wall which is disposed in the beam path of the ions, which has a value exceeding the kinetic energy of the ions, whereby the latter cannot pass therethrough.

REFERENCES:
patent: 3117022 (1964-01-01), Bronson et al.
patent: 3150257 (1964-09-01), Wilska
patent: 3370171 (1968-02-01), Ohta
patent: 3682729 (1972-08-01), Gukelberger et al.
patent: 3689766 (1972-09-01), Freeman
patent: 3717785 (1973-02-01), Guermet
patent: 3789185 (1974-01-01), Baldwin
"Method for fast-switching the ion beam in an ion-implantation facility" Boroffka et al. Vacuum Science and Technology Dec. 1973 vol. 23, No. 12 pp. 447-449 250-492A.

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