High speed InGaAsP lasers by gain enhancement doping

Details High speed InGaAsP lasers by gain enhancement doping High speed InGaAsP lasers by gain enhancement doping

1985-05-15

1987-11-10

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 26, H01S 319

Patent

active

047062533

ABSTRACT:
A new method for increasing the modulation bandwidth of InGaAsP lasers is described herein. The method of the present invention is based on the gain enhancement doping of the lasers active layer. Lasers with highly doped active regions were demonstrated to have larger modulation bandwidths than lightly doped devices.

REFERENCES:
patent: 4132960 (1979-01-01), Streifer et al.
patent: 4426700 (1984-01-01), Hirao et al.
Figueora et al., IEEE J. Quantum Elect., QE-18, 1718 (1982).
Tucker et al., Electron. Lett., 20L393 (1984).
Su et al., Appl. Phys. Lett., 45:1302 (1984).
Su et al., Appl. Phys. Lett., 46:344 (1985).
C. B. Su and R. Olshansky, Appl, Phys. Lett., 43:856 (1983).
Liau et al., Appl. Phys. Lett. 40:568 (1982).

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