1987-08-18
1989-01-03
LaRoche, Eugene R.
350356, G02F 101, G02F 103
Patent
active
047952407
ABSTRACT:
A shutter having no moving parts and intended for use at infrared wavelengths includes a thin film of vanadium dioxide deposited on an insulative layer of silicon oxide that has been grown on a thin substrate of semiconductive silicon. The layers are in good thermal contact, but the vanadium dioxide film is electrically insulated from the silicon substrate. The vanadium dioxide film is heated by passing a heating current through the semiconductive substrate, and is cooled by radiation. The resistance of the vanadium dioxide film is sensed continuously, and is used for turning on and turning off the heating current.
REFERENCES:
patent: 4545641 (1985-10-01), Sobey, Jr.
patent: 4615587 (1986-10-01), Krasutsky et al.
Weiser, K. and I. Chang, "Optically Erasing A Thermally Biased Thermally Switchably Film", IBM Technical Disclosure Bulletin, vol. 16, No. 7, pp. 2075-2076, Dec. 1973.
Schoennauer Lawrence J.
Wong Jacob Y.
Hibshman Corporation
LaRoche Eugene R.
McCutcheon Nathan W.
McKown Daniel C.
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