Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2005-06-14
2005-06-14
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S094000, C257S095000, C257S096000, C372S046012, C372S096000, C438S032000, C438S039000, C438S045000
Reexamination Certificate
active
06906353
ABSTRACT:
A vertical cavity surface emitting laser includes a first mirror region forming a first distributed Bragg reflector, a first cladding region, an active region, a second cladding region including a high electrical resistance implanted region positioned to define a current path, a second mirror region, and a current spreading region. A first electrical contact is positioned on the current spreading region and a second electrical contact is positioned to conduct electrical current in circuit with the first electrical contact through the current path. The current spreading region and the second mirror region cooperate to produce substantially uniform current distribution in the current path. A third mirror region is positioned on the current spreading region. The second and third mirror regions cooperate to provide a complete distributed Bragg reflector.
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Lee Hsing-Chung
Shieh Chan-Long
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
JDS Uniphase Corporation
Kang Donghee
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