Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2005-11-08
2005-11-08
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Reexamination Certificate
active
06963116
ABSTRACT:
It is ideal to amplify voltage within a pixel to obtain sufficient sensitivity and low noise characteristics in a short storing time in order to acquire high-speed images, but no method has existed to satisfy the three requirements of the electronic shutter operation, removal of reset noise and signal voltage amplification. To solve this problem, the present invention takes the ratio of the capacitor C1at point V1and capacitor C2at point V2to be large, and transfers charges from V1to V2,thereby enabling the signal voltage to be amplified. Moreover, the reset noise component sampled and included in VFD0before opening TX is the same amount as the reset noise included in the voltage after TX is opened and the ΔVFD of change occurred, so the reset noise is removed by taking out the amount of change ΔVFD and amplifying the signal voltage. By returning R to 3V, the charge injection from the section V1does not occur, thereby the voltage of V2is held as is, and enters into storage status. Being executed in all the pixels at the same timing, these operations play the role of the electronic shutter.
REFERENCES:
patent: 6818933 (2004-11-01), Henderson et al.
Nelms David
President of Shizuoka University
Tran Mai-Huong
Westerman Hattori Daniels & Adrian LLP
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