High speed high power two terminal solid state switch fired by d

Details High speed high power two terminal solid state switch fired by d High speed high power two terminal solid state switch fired by d

1976-02-09

1977-11-29

Miller, Jr., Stanley D.

357 13, 357 20, 357 86, H01L 2974

Patent

active

040608255

ABSTRACT:
A high speed, high power, four layer, two-terminal silicon diode switch or thyristor designed to be fired by dV/dt induced current is disclosed. The device includes a shunted main cathode emitter, and an auxiliary cathode emitter centrally of the main cathode emitter. The auxiliary cathode emitter is so dimensioned that it is deeper than the main cathode emitter; and the product of (1) the capacitance of the central forward blocking PN junction within the confines of the outer edge of the auxiliary cathode emitter, and (2) the effective radial resistance of the cathode base beneath the auxiliary cathode, and (3) the rate of application of the firing voltage on the anode dV/dt, is at least equal to seven tenths of a volt.

REFERENCES:
patent: 3236698 (1966-02-01), Shockley
patent: 3697833 (1972-10-01), Nakata
patent: 3766450 (1973-10-01), Voss et al.
patent: 3858236 (1974-12-01), Schafer et al.
patent: 3893153 (1975-07-01), Page et al.

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