High speed, high power plasma thyristor circuit

Details High speed, high power plasma thyristor circuit High speed, high power plasma thyristor circuit

1973-04-26

1976-03-16

James, Andrew J.

Oscillators

Relaxation oscillators

357 57, 357 58, 357 90, 331107R, H01L 2990

Patent

active

039450287

ABSTRACT:
A plasma thyristor circuit is provided for generating high power, ultra-short duration electrical signals. A silicon semiconductor body has first, second and third impurity regions therein with a PN junction formed at the transition between the first and second or the second and third impurity regions. The second impurity region has an impurity concentration of less than about 5 .times. 10.sup.14 atoms/cm.sup.3, and a width of greater than about 80 microns. The ratio of the punch-through voltage of the second impurity region to the reverse breakdown voltage of the PN junction is between 0.3 and 0.7. Power sources apply both a reverse bias voltage across the body greater than said punch-through voltage and less than said reverse breakdown voltage, and a current to the body having a density greater than the saturation current density of the second impurity region.

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patent: 3829880 (1974-08-01), Krishna
Proc. of the 3rd Conf. on Solid State Devices, Tokyo, 1971, Y. Terasawa, "Obs. of Plas. Spread in H-S Thyristors using new Microwave Tech.," p. 198-204.

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