High speed high power nitride semiconductor device

Details High speed high power nitride semiconductor device High speed high power nitride semiconductor device

2011-06-07

2011-06-07

Nadav, Ori (Department: 2811)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257S194000

Reexamination Certificate

active

07955984

ABSTRACT:
A nitride semiconductor device has: a substrate; a semiconductor lamination formed on the substrate, and including a channel layer of nitride semiconductor; source and drain electrodes formed on the semiconductor lamination in ohmic contact with the channel layer; an insulating layer formed on the semiconductor lamination, and having an opening in a gate electrode contact area, a total thickness portion having a flat surface and a total thickness in an area spaced apart from the opening, and a transient portion with monotonically changing thickness between the opening and the total thickness portion, a sidewall of the insulating layer facing the opening rising steeply to a partial thickness of the total thickness; and a T-shaped gate electrode contacting the semiconductor lamination layer in the opening and extending on the insulating film to portions with increased thickness thicker than the partial thickness.

REFERENCES:
patent: 5445979 (1995-08-01), Hirano
patent: 5521731 (1996-05-01), Fukuyama et al.
patent: 6159861 (2000-12-01), Asai et al.
patent: 7229900 (2007-06-01), Takayama et al.
patent: 7253061 (2007-08-01), Peng et al.
patent: 7419862 (2008-09-01), Lim et al.
patent: 2006/0125001 (2006-06-01), Sriram
patent: 2007/0200142 (2007-08-01), Lee et al.
patent: 63146439 (1988-06-01), None
patent: 2004-186679 (2004-07-01), None
patent: 2002-0082846 (2002-10-01), None
patent: 10-0631051 (2006-10-01), None
patent: WO 01/57929 (2001-08-01), None
patent: WO 2004/066393 (2004-08-01), None
Office Action dated Aug. 17, 2009 in counterpart Korean patent application No. 10-2007-0120043 with English translation.
Seoul National University Master's Thesis p. 1-1.

Affiliated with

Also associated with

Rating

High speed high power nitride semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High speed high power nitride semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High speed high power nitride semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2736164