High-speed heterojunction transistor

Details High-speed heterojunction transistor High-speed heterojunction transistor

1995-02-03

1997-12-16

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

257192, 257197, 257201, 257615, H01L 310328

Patent

active

056988680

ABSTRACT:
A high-speed heterojunction transistor includes a first region for controlling current, and a second region for receiving carriers which have passed the first region. An energy level difference between a lowermost valley of energy and an upper valley of energy in the conduction band of a semiconductor material constituting the second region is greater than that of a semiconductor material constituting the first region.

REFERENCES:
patent: 4119994 (1978-10-01), Jain et al.
patent: 4366493 (1982-12-01), Braslau et al.
patent: 4395722 (1983-07-01), Esaki et al.
patent: 4460910 (1984-07-01), Chappell et al.
patent: 4821090 (1989-04-01), Yokoyama
patent: 4845541 (1989-07-01), Xu et al.

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