High-speed film forming method by microwave plasma chemical vapo

Details High-speed film forming method by microwave plasma chemical vapo High-speed film forming method by microwave plasma chemical vapo

1991-04-08

1994-05-10

Hearn, Brian E.

Coating apparatus

Gas or vapor deposition

With treating means

156345, 118715, 118723MW, C23C 1650

Patent

active

053104269

ABSTRACT:
A film forming method and an apparatus therefor, in which reactant gas and carrier gas set at 10 torr through several atmospheres, much higher than the conventional plasma CVD gas pressure are put in a plasma condition of high density by utilizing standing waves or progressive waves of the microwave in a predetermined space, and then neutral radicals and ions of reactant species based on the reactant gas are guided to a substrate, thereby forming a thin film thereon at high-speed.

REFERENCES:
patent: 4160690 (1979-07-01), Shibayaki et al.
patent: 4970435 (1990-11-01), Tanaka et al.
patent: 4985109 (1991-01-01), Otsubo et al.
patent: 4998979 (1991-03-01), Niino
patent: 5015494 (1991-05-01), Yamazaki
"Microwave Plasma CVD System for the Fabrication of Thin Solid Films", Jaese Journal of Applied Physics, vol. 21, No. 8, Aug. 1982, pp. L470-L472.
"The Growth of Diamond in Microwave Plasma Under Low Pressure", Journal of Materials Science 22 (1987) 1557-1562.

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