High-speed film forming method by microwave plasma chemical vapo

Details High-speed film forming method by microwave plasma chemical vapo High-speed film forming method by microwave plasma chemical vapo

1990-08-02

1991-08-06

Pianalto, Bernard

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 451, B05D 306

Patent

active

050376667

ABSTRACT:
A film forming method and an apparatus therefor, in which reactant gas and carrier gas set in 10 torr through several atms very higher than the conventional plasma CVD gas pressure are put in a plasma condition of high density by utilizing standing waves or progressive waves of the microwave in a predetermined space, and then neutral radicals and ions of reactant species based on the reactant gas are guided to a substrate, thereby high-speed forming a thin film thereon.

REFERENCES:
"Microwave Plasma CVD System for the Fabrication of Thin Solid Films", Jaese Journal of Applied Physics, vol. 21, No. 8, Aug. 1982, pp. L470-L472.
"The Growth of Diamond in Microwave Plasma Under Low Pressure", Journal of Materials Science 22 (1987) 1557-1562.

Affiliated with

Also associated with

Rating

High-speed film forming method by microwave plasma chemical vapo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-speed film forming method by microwave plasma chemical vapo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-speed film forming method by microwave plasma chemical vapo will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1985912