High speed electronics interconnect and method of manufacture

Details High speed electronics interconnect and method of manufacture High speed electronics interconnect and method of manufacture

2004-03-04

2008-11-18

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C343S768000

Reexamination Certificate

active

07453143

ABSTRACT:
A high-speed electrical interconnection system is provided. The interconnection system comprises one or more electrical signal lines, or differential pairs of signal lines, and an in homogeneous dielectric system. The dielectric system further comprises a homogeneous dielectric layer interposed between the electrical signal lines, and an electrical conducting plane including a periodic array etched in the conducting material of the conducting plane. The inhomogeneous dielectric system exhibits a lower effective dielectric constant as compared to the dielectric constant of the homogeneous dielectric layer, resulting in lower microwave loss, reduced signal propagation delay, reduced signal skew and increased signal bandwidth. The interconnection system may be implemented for connecting one or more high speed electronic elements on-chip, off-chip, chip-chip connection on multilayer printed circuit boards, high speed die-package, high speed connectors and high speed electric cables.

REFERENCES:
patent: 5066928 (1991-11-01), Ikezi et al.
patent: 5166693 (1992-11-01), Nishikawa et al.
patent: 2002/0167456 (2002-11-01), McKinzie, III
patent: 2002/0183013 (2002-12-01), Auckland et al.
patent: 2003/0043071 (2003-03-01), Lilly et al.
patent: 2003/0197658 (2003-10-01), Lilly et al.

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