High speed electron tunneling devices

Details High speed electron tunneling devices High speed electron tunneling devices

2006-09-12

2006-09-12

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Tunneling through region of reduced conductivity

C257S031000, C257S032000

Reexamination Certificate

active

07105852

ABSTRACT:
A detector includes a voltage source for providing a bias voltage and first and second non-insulating layers, which are spaced apart such that the bias voltage can be applied therebetween and form an antenna for receiving electromagnetic radiation and directing it to a specific location within the detector. The detector also includes an arrangement serving as a transport of electrons, including tunneling, between and to the first and second non-insulating layers when electromagnetic radiation is received at the antenna. The arrangement includes a first insulating layer and a second layer configured such that using only the first insulating in the arrangement would result in a given value of nonlinearity in the transport of electrons while the inclusion of the second layer increases the nonlinearity above the given value. A portion of the electromagnetic radiation incident on the antenna is converted to an electrical signal at an output.

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