High-speed electro-absorption modulator with low drive voltage

Details High-speed electro-absorption modulator with low drive voltage High-speed electro-absorption modulator with low drive voltage

2006-09-05

2006-09-05

Mack, Ricky (Department: 2873)

Optical: systems and elements

Optical modulator

Light wave temporal modulation

Reexamination Certificate

active

07102807

ABSTRACT:
The present invention is an electro-absorption modulator with a p-i-n-i-n epitaxy layer whose structure is p-i(MQW)-n+-i(collector)-n to release the trade-off between the operation voltage and the speed, to increase the confinement factor of the light in the un-doped layers, and to reduce the insertion loss caused by the free-carrier absorption in the doped layers, wherein MQW stands for Multiple-Quantum Well.

REFERENCES:
patent: 5165105 (1992-11-01), Haase et al.
patent: 5416338 (1995-05-01), Suzuki et al.
patent: 5909303 (1999-06-01), Trezza et al.
patent: 6194290 (2001-02-01), Kub et al.
patent: 6426236 (2002-07-01), Ishizaka et al.
patent: 2004/0081389 (2004-04-01), Soda et al.

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