High speed driving circuit

Details High speed driving circuit High speed driving circuit

1983-11-10

1986-07-22

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307451, 307576, 307446, H01L 2702, H03K 1920, H03K 1902, H03K 17687

Patent

active

046022694

ABSTRACT:
A semiconductor device comprises a complementary FET circuit wherein respective gate and drain of a P-channel FET are commonly connected to those of an N-channel FET with each other, the common node of each gate serves as an input terminal, while the common node of each drain serves as an output terminal, and the source of each FET is connected to said first and second reference power sources. The semiconductor device further comprises an additional complementary FET circuit wherein respective gate and drain of a P-channel FET are commonly connected to those of an N-channel FET with each other, the common node of each drain is connected to the input terminal, while the common node of each gate is connected to the output terminal, and the source of each FET is connected to the output terminal, and the source of each FET is connected to the wafer of the complementary FET circuit.

REFERENCES:
patent: 4262340 (1981-04-01), Sasaki et al.
patent: 4481524 (1984-11-01), Tsujide
H. Higuchi et al, "High Performance Bipolar LSIs: Their Present Status and Future", 1982 VLSI Symposium.

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