Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1996-06-03
1997-04-29
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257197, 257623, 257626, 257586, 257593, H01L 29201
Patent
active
056252064
ABSTRACT:
The total base-collector capacitance of a double-heterostructure bipolar transistor device is reduced by removing semiconductor material from the extrinsic regions and replacing the removed material with a relatively-low-dielectric-constant material, The base-collector capacitance is further reduced by using a composite subcollector structure that permits the extrinsic regions to be made thicker than the intrinsic region of the device.
REFERENCES:
patent: 5070028 (1991-12-01), Tews et al.
patent: 5206524 (1993-04-01), Chen et al.
patent: 5345097 (1994-09-01), Nakagawa
patent: 5445976 (1995-08-01), Henderson et al.
patent: 5525818 (1996-06-01), Hill
Chandrasekhar S.
Dentai Andrew G.
Miyamoto Yasuyuki
Guay John
Jackson Jerome
Lucent Technologies - Inc.
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