Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate
2006-05-23
2010-10-12
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
C257S401000, C257S482000, C438S140000
Reexamination Certificate
active
07812368
ABSTRACT:
The invention relates to a high-speed diode comprising a semiconductor body (1), in which a heavily n-doped zone (8), a weakly n-doped zone (7) and a weakly p-doped zone (6) are arranged successively in a vertical direction (v), between which a pn load junction (4) is formed. A number of heavily p-doped islands (51-57) spaced apart from one another are arranged in the weakly p-doped zone (6). In this case, it is provided that the cross-sectional area density of the heavily p-doped islands (51-57) is smaller in a first area region (100) near to the edge than in a second area region (200) remote from the edge.
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H. Akiyama et al. “Partial lifetime control in IGBT by helium irradiation through mask patterns” Proc. ISPSD '91, p. 187.
Barthelmess Reiner
Niedernostheide Franz-Josef
Schulze Hans-Joachim
Coats & Bennett P.L.L.C.
Infineon - Technologies AG
Laurenzi, III Mark A
Pham Thanh V
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