High speed diode

Details High speed diode High speed diode

1984-04-11

1986-06-10

Edlow, Martin H.

357 15, 357 53, 357 64, 357 89, 357 90, H01L 2991, H01L 29167

Patent

active

045946027

ABSTRACT:
A high-speed diode with a PNN.sup.+ structure has a breakdown voltage of about 200 V, a forward voltage drop of 0.9 V or less, a reverse recovery time of 50 nsec or less, and a soft recovery characteristic, by making the impurity concentration in the surface of a P-layer equal to or less than 8.times.10.sup.18 atoms/cc, putting the thickness of the P-layer in a range from 2 to 6 .mu.m, putting the resistivity of an N-layer in a range from 5 to 12.OMEGA.-cm, putting the thickness of the N-layer in a range from 19 to 25 .mu.m, and putting the carrier lifetime in the N-layer in a range from 20 to 40 nsec.

REFERENCES:
patent: 3675091 (1972-07-01), Naomoto et al.
patent: 3964084 (1976-06-01), Andrews et al.
patent: 4131339 (1978-12-01), Dannhauser et al.
patent: 4476481 (1984-10-01), Iesaka et al.
Sze, Physics of Semiconductor Devices, J. Wiley, 1981, N.Y., pp. 304-306.

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