High-speed dielectrically isolated devices utilizing buried sili

Details High-speed dielectrically isolated devices utilizing buried sili High-speed dielectrically isolated devices utilizing buried sili

1990-05-21

1991-01-22

James, Andrew J.

357 22, 357 237, 357 2311, 357 35, 357 41, 357 47, 357 63, 357 67, H01L 2712, H01L 2980, H01L 2972

Patent

active

049874713

ABSTRACT:
A dielectrically-isolated structure and method of fabricating the same is disclosed wherein the structure includes a layer of silicide which is selectively doped, preferably using an ion implantation process. The doped silicide is then used as the diffusion source for the subsequent formation (through a heat treatment) of various active portions (collector, emitter, drain, source, for example) of a variety of high-voltage, high-speed active devices. The non-doped silicide is advantageously utilized as a low-resistance contact between the buried diffusion region and the surface electrode.

REFERENCES:
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patent: 3653120 (1972-04-01), Sirrine et al.
patent: 4242697 (1980-12-01), Berthold et al.
patent: 4356622 (1982-11-01), Widmann
patent: 4553318 (1985-11-01), Chandrasekhar
patent: 4593458 (1986-06-01), Adler
patent: 4782377 (1988-11-01), Mahan
patent: 4819037 (1989-04-01), Sakakibara

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