High speed device simulating method

Details High speed device simulating method High speed device simulating method

1996-08-15

1998-10-27

Teska, Kevin J.

Boots, shoes, and leggings

364489, G06F 1750

Patent

active

058285865

ABSTRACT:
In a method for simulating parameters including a potential in a semiconductor device, deviations of the parameters are calculated for a plurality of nodes of a mesh in the semiconductor device by Newton's method. However, when absolute values of electric fields are larger than a first value and deviations of the electric fields are larger than a second value, the parameters are renewed by adding values smaller than the deviations of the parameters thereto. Otherwise, the parameters are renewed by adding the deviations of the parameters thereto.

REFERENCES:
patent: 5103415 (1992-04-01), Omura et al.
patent: 5408638 (1995-04-01), Sagawa et al.
patent: 5682338 (1997-10-01), Yokota et al.
patent: 5684723 (1997-11-01), Nakadai et al.
Franz et al., "Finite Boxes-A Generalization of the Finite Difference Method Suitable for Semiconductor Device Simulation", IEEE, Jun. 1983, pp. 1070-1082.
Bank et al., "Numerical Methods for Semiconductor Device Simulation", IEEE, Jun. 1983, pp. 1031-1041.
Wu et al., "A Stride Towards Practical 3-D Device Simulation-Numerical and Visualization Considerations", IEEE Sep. 1991, pp. 1132-1140.
Akcasu, "Convergence Properties of Newton's Method for the Solution of the Semiconductor Transport Equations and Hybrid Solution Techniques for Multidimensional Simulation of VLSI Devices," Solid-State Electronics., vol. 27, No.4, pp. 319-328, 1984.
Franz et al., "Bambi--A Design Model for Power MOSFET's," IEEE Transactions on Computer-Aided Design., vol. CAD-4, No. 3, Jul. 1985, pp. 177-189.
Bank et al., "Transient Simulation of Silicon Devices and Circuits," IEEE Transactions on Electron Devices., vol. Ed-32, No.10, Oct. 1985, pp. 1992-2007.

Affiliated with

Also associated with

Rating

High speed device simulating method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High speed device simulating method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High speed device simulating method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1619055