High speed detectors having integrated electrical components

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S438000, C257S458000, C257S466000

Reexamination Certificate

active

06919609

ABSTRACT:
An opto-electronic device configured as a photodetector has a capacitor and/or resistor monolithically formed on a surface of the photodetector. The capacitor capacitively couples the AC ground of the photodetector to the bias terminal of the photodetector. The on chip capacitor design eliminates the inductance of external circuit traces between the power supply and an external capacitor. The resistor forces the AC return current of the photodetector through the AC ground in preference to the typical (DC bias terminal) path. Combinations of capacitors and resistors are particularly effective in reducing crosstalk among adjacent detectors in arrays.

REFERENCES:
patent: 3849678 (1974-11-01), Flynn
patent: 5132541 (1992-07-01), Conrads et al.
patent: 5448099 (1995-09-01), Yano

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