High speed cross-point switch using SiGe HBT technology

Details High speed cross-point switch using SiGe HBT technology High speed cross-point switch using SiGe HBT technology

2006-01-10

2006-01-10

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C340S002290

Reexamination Certificate

active

06984870

ABSTRACT:
A high-speed cross-point switch is built on a preferably silicon substrate and uses bipolar transistor switching elements. Preferably, the bipolar transistors are SiGe bipolar junction transistors. Intersecting conductive input and output microstrips are preferably thinned at their intersections to reduce shunt capacitance between the coupled lines. It is also preferred that the input buffer be connected in cascode fashion with the switching transistors in order to create an amplification stage. The signal and its inverse are carried on balanced microstrip pairs in order to reduce electromagnetic field strength at the center of the balanced line pairs thereby improving isolation between two crossing balanced pairs.

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