High-speed compound semiconductor device having an improved gate

Details High-speed compound semiconductor device having an improved gate High-speed compound semiconductor device having an improved gate

1999-06-09

2000-06-20

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257283, 257472, 257473, 257485, 257486, 257764, H01L 31112, H01L 27095, H01L 2947, H01L 29812, H01L 3107

Patent

active

060780711

ABSTRACT:
A semiconductor device includes a gate structure formed on a substrate in which an LDD structure is formed, wherein gate structure includes a Schottky electrode making a Schottky contact with a channel region in the substrate, a low-resistance layer provided above the Schottky electrode, and a stress-relaxation layer interposed between the Schottky electrode and the stress-relaxation layer. The low-resistance layer and said stress-relaxation layer form an overhang structure with respect to the Schottky electrode.

REFERENCES:
patent: 4845534 (1989-07-01), Fukuta
patent: 5220186 (1993-06-01), Kasai et al.
patent: 5648668 (1997-07-01), Kasai
patent: 5672890 (1997-09-01), Nakajima
patent: 5675159 (1997-10-01), Oku et al.
patent: 5942773 (1999-08-01), Kaneko
Nishimura, K., et al., IEEE Transactions on Electron Devices, vol. 44, No. 11, Nov. 1997, pp. 2113-2119.

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