High speed CMOS sense circuit for semiconductor memories

Details High speed CMOS sense circuit for semiconductor memories High speed CMOS sense circuit for semiconductor memories

1978-03-13

1979-10-09

Anagnos, Larry N.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

307279, 307362, 307DIG3, 365184, 365205, 365208, H03K 520, H03K 3353, G11C 700, G11C 1140

Patent

active

041707419

ABSTRACT:
A high speed sensing circuit is described incorporating complementary metal oxide semiconductor field effect transistor circuitry for sensing, amplifying and storing a signal indicative of the polarity of the difference voltage across two load elements. The load elements may be a pair of variable threshold transistors.

REFERENCES:
patent: 3518635 (1970-06-01), Cole et al.
patent: 3925804 (1975-12-01), Cricchi et al.
patent: 3938109 (1976-02-01), Gionis et al.
patent: 3992704 (1976-11-01), Kantz
patent: 4003035 (1977-01-01), Hoffman
patent: 4039861 (1977-08-01), Heller et al.
patent: 4094008 (1978-06-01), Lockwood
patent: 4114055 (1978-09-01), Hollingsworth
Aaron, IBM Technical Disclosure Bulletin, pp. 1768-1769, vol. 19, No. 5, 10/1976.

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