High speed bistable multivibrator circuit

Details High speed bistable multivibrator circuit High speed bistable multivibrator circuit

1975-05-09

1976-09-21

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307235F, 307235H, 307DIG3, H03K 3286, H03K 3353, H03K 520

Patent

active

039821404

ABSTRACT:
A high speed field-effect transistor (FET) bistable multivibrator circuit is described. This bistable circuit employs two stable states and comprises a first section and a second section. Each section comprises a load transistor of high resistance magnitude for insuring a high gain; input means for storing a voltage representation of the input signal applied to that section; switching means responsive to the voltage stored in the input means for turning on one of the switching transistors; and cross-coupling and driving means, responsive to the switching transistor which turns on, for discharging the voltage representation of the input signal applied to the switching transistor in the opposite section.

REFERENCES:
patent: 3868656 (1975-02-01), Stein et al.
patent: 3892984 (1975-07-01), Stein
Critchlow, "Sense Amplifier for IGFET Memory," vol. 13, No. 6, pp. 1720-1722; 11/1970, IBM Tech. Discl. Bull.

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