High speed bipolar transistor using a patterned etch stop and di

Details High speed bipolar transistor using a patterned etch stop and di High speed bipolar transistor using a patterned etch stop and di

1995-06-07

1997-05-13

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With base region having specified doping concentration...

257526, 257557, 257558, 257587, 257588, 257739, 257754, 257776, H01L 27082

Patent

active

056295561

ABSTRACT:
A bipolar transistor (100) and a method for forming the same. A base-link diffusion source layer (118) is formed over a portion of the collector region (102). The base-link diffusion source layer (118) comprises a material that is capable of being used as a dopant source and is capable of being etched selectively with respect to silicon. A base electrode (114) is formed over at least one end portion of the base-link diffusion source layer (118) and the exposed portions of the base-link diffusion source layer (118) are removed. An extrinsic base region (110) is diffused from the base electrode (114) and a base link-up region (112) is diffused from the base-link diffusion source layer (118). Processing may then continue to form an intrinsic base region (108), emitter region (126), and emitter electrode (124).

REFERENCES:
patent: 4843034 (1989-06-01), Herndon et al.
patent: 5331199 (1994-07-01), Chu et al.

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