High speed bias-free photodetector

Details High speed bias-free photodetector High speed bias-free photodetector

1984-03-22

1985-11-12

Edlow, Martin H.

357 16, 357 56, 357 4, H01L 2714

Patent

active

045531552

ABSTRACT:
A high speed bias-free photodetector which capacitively couples the output signal to an external circuit is described.

REFERENCES:
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Hiyamizu et al., "High Mobility of Two-Dimensional Electrons at the GaAsIn--AlGaAs Heterojunction Interbase", Appl. Phys. Lett., vol. 39, No. 9, pp. 805-807, Nov. 1980.
Mimura et al., "A New Field Effect Transistor with Selectively Dopant GaAsIn--Al.sub.x Ga.sub.1-x As Heterojunctions", Jap. J. Appl. Phys., vol. 19, No. 5, pp. L225-L227, May 1980.
H. Melchior, "Detectors for Lightwave Communication," Physics Today, Nov. 1977, pp. 32-39.
F. Capasso et al., "InGaAsP/InGaAs Heterojunction p-i-n Detectors with Low Dark Current and Small Capacitance for 1.3-1.6 .mu.m Fibre Optic Systems," Electronics Letters, vol. 16, No. 23, Nov. 6, 1980, pp. 893-895.

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