Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1985-03-26
1987-09-15
Miller, Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307443, 307448, 307570, 307270, H03K 19013, H03K 19017
Patent
active
046942033
ABSTRACT:
A bipolar/CMOS mixed type switching circuit comprising two npn-type bipolar transistors Q.sub.1, Q.sub.2 that are connected in the form of a totem pole in the output stage, a CMOS inverter and an NMOSFET M.sub.3 for driving these transistors in a complementary manner, and resistance means R for discharging the electric charge stored in the base of the transistor Q.sub.2. The threshold voltage of an NMOSFET M.sub.2 constituting the CMOS inverter in the absence of substrate effect is set to be substantially equal to the threshold voltage of the NMOSFET M.sub.3 in the absence of the substrate effect, and the channel conductance W.sub.N /L.sub.N of the NMOSFET M.sub.3 is so set that the threshold voltage V.sub.LT1 of the CMOS inverter and the practical threshold voltage V.sub.LT2 of the NMOSFET M.sub.3 will be nearly the same. Owing to the above structure, there is obtained a switching circuit which permits little through current to flow and which operates at high speeds.
REFERENCES:
patent: 4558234 (1985-12-01), Suzuki et al.
Lin et al., "Complementary MOS-Bipolar Transistor Structure, IEEE Ted, vol. Ed-16, No. 11, Nov. 1969, pp. 945-951.
Iwamura Masahiro
Masuda Ikuro
Suzuki Yukio
Uragami Akira
Hitachi , Ltd.
Hudspeth D. R.
Miller Stanley D.
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