High-side MOSFET gate protection shunt circuit

Details High-side MOSFET gate protection shunt circuit High-side MOSFET gate protection shunt circuit

1997-12-17

1999-06-01

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Amplitude control

327110, 327309, 327427, H03K 508

Patent

active

059091355

ABSTRACT:
A high-side MOSFET gate protection shunt circuit is provided for protecting an output driving transistor (10). The output driving transistor (10) is operable to drive a load (18) on an output node (12). A sense resistor (26) is disposed between the supply voltage terminal and the output node (12). The gate of transistor (10) is driven by a current limited driver (20). In order to prevent the voltage across the gate oxide of transistor (10) from exceeding a predetermined voltage above which would be destructive to the transistor, a bypass transistor (32) is disposed between the output of the MOSFET driver (14) and the supply terminal (11). The gate of this transistor (32) is connected to the output node (12), such that the voltage on the gate of transistor (10) is limited to one threshold voltage below the voltage on the output node (12).

REFERENCES:
patent: 5010439 (1991-04-01), Zisa et al.
patent: 5361008 (1994-11-01), Saijo
patent: 5828141 (1998-10-01), Foerster

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