Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage
Reexamination Certificate
2000-07-20
2002-06-11
Cunningham, Terry D. (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Specific identifiable device, circuit, or system
With specific source of supply or bias voltage
C327S447000
Reexamination Certificate
active
06404267
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to a new circuit design which permits precision triggering of a load during predetermined phases of an A/C cycle and to control the activation of a load. In prior art applications, a triac or thyristor is often used to perform phase control of the A/C cycle. In one common application involving outdoor electric lights, phase control of the A/C cycle is used to dim the light source. A drawback in using a triac or thyristor, however, is that the device will only deactivate at zero crossing in the A/C cycle. Thus, to phase control a load with a triac or thyristor, it must be triggered sometime after zero crossing which will lead to an increase in electromagnetic interference (EMI) and the ability to deactivate a load when desired.
SUMMARY OF THE INVENTION
The present invention solves the above mentioned design problems by providing circuitry which uses a high side mosfet drive that may be activated and deactivated at any point in the A/C cycle. To do this, the circuitry of the present invention uses an A/C line to activate the mosfet drive and to charge a capacitor during the positive phase of the A/C cycle. During the negative phase, the circuitry is designed to use the discharge of the capacitor to activate the mosfet drive, if desired.
REFERENCES:
patent: 5010439 (1991-04-01), Zisa et al.
patent: 5506539 (1996-04-01), Kelly et al.
patent: 5886563 (1999-03-01), Nasila
patent: 6046622 (2000-04-01), Miles
patent: 6191625 (2001-02-01), Wachter et al.
Interfacing Power MOSFETS to Logic Devices, Taken fromMotorola Semiconductor Application Note, by Ken Berringer, 1990.
Introduction to Power MOSFETS and Their Applications, Taken fromFairchild Semiconductor, Rev B—Oct. 1998.
MOSFET Basics—Contents, Taken fromFairchild Semiconductorby K.S. Oh, Rev D—Jul. 2000.
Designing with TMOS Power MOSFETS, Taken fromMotorola Inc.1983, by Kim Gauen.
Gate Drive Characteristiics and Requirements for HEXFET'S,AN-937 (v.Int)(Date Unknown).
HV Floating MOS-Gate Driver ICS (HEXFET is a Trademark of International Recifier), Taken fromInternational Rectifier(Date Unknown).
High and Low Side Driver, Taken fromInternational Rectifier, Data Sheet No.: PD60147-L, Apr. 2000.
Cooper Industries
Cunningham Terry D.
Nguyen Long
Niro Scavone Haller & Niro
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