High side driver MOS circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307443, 307570, 3072471, 3072721, H03K 1716, H03K 1760

Patent

active

049423096

ABSTRACT:
A MOS high side driver circuit switching a supply voltage by means of a power switching transistor M1 driven by a driving circuit in function of a drive switching signal C, utilizes a flip-flop for driving the gate of the power switching transistor M1. The inputs SET and RESET of the flip-flop are respectively connected to the drain node of two, grounded source, input transistors supplied from a V.sub.GG rail maintained at a constant potential difference from the source (output) node of the power switching transistor M1. Two pulse signals C.sub.R, C.sub.S and corresponding to a rising and to a falling edge of the drive switching signal C from which they are derived by suitable circuit means, are respectively applied to the gates of the two input transistors. The driving circuit dissipates only during transitions in contrast to the driving circuits of the prior art.

REFERENCES:
patent: 4498021 (1985-02-01), Uya
patent: 4677324 (1987-06-01), Ronan, Jr. et al.
patent: 4837458 (1989-06-01), Kawahato et al.

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