Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Patent
1991-03-15
1992-03-03
Howell, Janice A.
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
250372, 357 30, H01L 310264
Patent
active
050935763
ABSTRACT:
A high sensitivity radiation detecting photodiode formed in silicon carbide comprises a monocrystalline silicon carbide substrate; a first monocrystalline portion of silicon carbide upon the substrate and having a first conductivity type; a second monocrystalline portion of silicon carbide adjacent the first portion and having the opposite conductivity type from the first portion; and a p-n junction between the adjacent first and second portions. The photodiode provides a dark current density of no more than about 1.times.10.sup.-9 amps/cm.sup.2 at a reverse bias of -1.0 volts and at temperatures of 170.degree. C. or less.
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Carter, Jr. Calvin H.
Edmond John A.
Cree Research
Hanig Richard
Howell Janice A.
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