1988-08-23
1990-04-24
Edlow, Martin H.
357 41, 357 48, 357 22, H01L 2714
Patent
active
049203959
ABSTRACT:
The sensitivity of a photodiode, which has a semiconductor substrate of first conductivity, an island region of an epitaxial layer of oppposite second conductivity formed on the substrate, a diffused region of the first conductivity formed in the epitaxial layer through its entire thickness so as to define the island region and a diffused region of the second conductivity formed in a surface region of a marginal area of the island region, is enhanced by forming a shallow laminar region of the first conductivity in the surface of a major area of the island region by ion implantation. The photodiode of improved sensitivity can be integrated with simplified circuit components to provide a single-chip photodetecting or photosensitive device by a conventional bipolar process.
REFERENCES:
patent: 3309610 (1967-03-01), Yamamoto
patent: 3529217 (1970-09-01), Santen
patent: 4237473 (1980-12-01), Chiang
patent: 4241358 (1980-12-01), Wade
patent: 4318115 (1982-03-01), Yoshikawa
patent: 4649409 (1987-03-01), Roppongi et al.
Edlow Martin H.
Nissan Motor Company Limited
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