High-sensitivity, low-noise transistor amplifier

Details High-sensitivity, low-noise transistor amplifier High-sensitivity, low-noise transistor amplifier

1992-03-18

1993-03-09

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330156, 330292, 330307, 377 59, H03F 108, H03K 2346

Patent

active

051929201

ABSTRACT:
A high-gain, low-noise transistor amplifier comprises an input, an output, and first and second field effect transistors each having a gate, a drain, and a source and being formed in a common semiconductor substrate. The second transistor is a depletion mode transistor if it is of the same conductivity type as the first but is an enhancement mode transistor if it is of opposite conductivity type with respect to the first. In an amplifier configuration, the input is coupled to the gate of the first transistor, the source of the first transistor is coupled to the gate of the second transistor, the source of the second transistor is coupled to the output, and there is a direct-coupled feedback path from the source of the second transistor to the drain of the first transistor. At least the first transistor is formed in an isolated well of conductivity opposite to that of the substrate in the semiconductor substrate and its source is coupled directly to that well.

REFERENCES:
patent: 4646002 (1987-02-01), Tuszyski

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