High-sensitivity image sensor and fabrication method thereof

Details High-sensitivity image sensor and fabrication method thereof High-sensitivity image sensor and fabrication method thereof

2006-06-13

2006-06-13

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S225000, C257S232000, C257S290000, C257S291000, C438S048000, C438S057000, C438S325000, C438S532000

Reexamination Certificate

active

07061031

ABSTRACT:
A method of fabricating a high-sensitivity image sensor is disclosed. The disclosed method comprises: etching a predetermined region of active silicon and a buried oxide layer by using a mask over an SOI substrate to expose an N-type silicon substrate; implanting P-type ions into the exposed N-type silicon substrate to form a P-type region; forming crossed active silicon by patterning the rest of the active silicon not etched while the active silicon is etched to expose the N-type silicon substrate; implanting P-type ions into first two predetermined regions facing each other of the crossed active silicon to form P-type regions; implanting N-type ions into second two predetermined regions facing each other except for the P-type regions of the crossed active silicon to form N-type regions; forming a gate oxide layer and a gate electrode on the crossed active silicon; and forming a connection part to connect the P-type region of the crossed active silicon to the P-type region of the silicon substrate.

REFERENCES:
patent: 5901257 (1999-05-01), Chen et al.
patent: 6020581 (2000-02-01), Dennard et al.
patent: 6127697 (2000-10-01), Guidash
patent: 6380037 (2002-04-01), Osanai
patent: 6979587 (2005-12-01), Lee
patent: 2003/0096443 (2003-05-01), Hwang
U.S. Appl. No. 11/024,787 to Kim, which was filed on Dec. 30, 2004.

Affiliated with

Also associated with

Rating

High-sensitivity image sensor and fabrication method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-sensitivity image sensor and fabrication method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-sensitivity image sensor and fabrication method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3692150