High sensitivity, broad band charge detecting apparatus with sup

Details High sensitivity, broad band charge detecting apparatus with sup High sensitivity, broad band charge detecting apparatus with sup

1993-05-26

1996-02-27

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257249, 257250, 257300, H01L 27148, H01L 29768

Patent

active

054951160

ABSTRACT:
An electric charge detecting apparatus comprising vertical CCD, horizontal CCD and floating diffusion amplifier comprised of floating diffusion layer and source follower amplifier comprising a MOS transistor wherein a buffer electrode is arranged at one end of a gate electrode of the MOS transistor, the gate electrode is formed within an active region of the MOS transistor, a contact hole is provided for connecting a polysilicon layer arranged on a charge-voltage transformer and the source follow or plural P wells are formed and one of them is arranged under a wiring connecting the charge-voltage transformer and the source follower and connected to a source of a drive transistor. Said electric charge detecting apparatus further comprising, P.sup.+ region arranged under a field oxide film on which an output signal wiring from the source follower is electrically isolated from another P.sup.+ region or no P.sup.+ regions are provided under the field oxide film.

REFERENCES:
patent: 4266237 (1981-05-01), Hendrickson
patent: 4668971 (1987-05-01), Hynecek
patent: 5192990 (1993-03-01), Stevens
White et al., "Characterization of Surface Channel CCD Image Arrays at Low Light Levels", IEEE Journal of Solid-State Circuits, vol. SC-9, No. 1 (Feb. 1974).

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