High selectivity plasma etching method

Details High selectivity plasma etching method High selectivity plasma etching method

1980-09-03

1982-09-07

Reynolds, B. A.

Electric heating

Metal heating

By arc

156646, 156345, 204192E, 219121PD, 219121PF, 219121PG, B23K 900, H01L 21306

Patent

active

043485774

ABSTRACT:
A parallel-plate type gas plasma etching apparatus for etching a workpiece having a multilayer structure having a high etch rate ratio. A pair of parallel-plate electrodes are disposed in a reactor. A workpiece to be etched is disposed upon one of the electrodes. The reactor is held at a predetermined pressure and an etching gas supplied thereto. Rf power is applied between the electrodes with the positive terminal of the rf generator being coupled to the electrode upon which the workpiece is disposed. The frequency of the rf power is 10 MHz or less.

REFERENCES:
patent: 3664942 (1972-05-01), Hauas et al.
patent: 3994793 (1976-11-01), Harvilchuck et al.
patent: 4062102 (1977-12-01), Lawrence et al.
patent: 4085022 (1978-04-01), Wechsung et al.
patent: 4253907 (1981-03-01), Parry et al.

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