High selectivity plasma etching apparatus

Details High selectivity plasma etching apparatus High selectivity plasma etching apparatus

1981-08-26

1984-03-20

Paschall, M. H.

Electric heating

Metal heating

By arc

219121PG, 219121PR, 156646, B23K 900, C23F 102

Patent

active

044383150

ABSTRACT:
A parallel-plate type gas plasma etching apparatus for etching a workpiece having a multilayer structure having a high etch rate ratio. A pair of parallel-plate electrodes are disposed in a reactor. A workpiece to be etched is disposed upon one of the electrodes. The reactor is held at a predetermined pressure and an etching gas supplied thereto. Rf power is applied between the electrodes with the positive terminal of the rf generator being coupled to the electrode upon which the workpiece is disposed. The frequency of the rf power is 10 MHz or less.

REFERENCES:
patent: 3971684 (1976-07-01), Muto et al.
patent: 3994793 (1976-11-01), Harvilchuck et al.
patent: 4062102 (1977-12-01), Lawrence et al.
patent: 4073669 (1978-02-01), Heinecke et al.
patent: 4097618 (1978-06-01), Poliniak
patent: 4333814 (1982-06-01), Kugel

Affiliated with

Also associated with

Rating

High selectivity plasma etching apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High selectivity plasma etching apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High selectivity plasma etching apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1605933