High selectivity colloidal silica slurry

Abrading – Abrading process – Glass or stone abrading

Reexamination Certificate

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C451S037000, C438S692000, C252S079100

Reexamination Certificate

active

06964600

ABSTRACT:
Provided is a novel high selectivity aqueous slurry composition method of utilizing same. The composition includes non-modified silica based abrasive particles in an amount of about 5 to about 50 weight percent, and an organic compound in an amount of about 0.001 to about 2.0 weight percent in an aqueous solution, wherein the silicon oxide to silicon nitride selectivity ratio ranges from about 50 to about 700.

REFERENCES:
patent: 4525631 (1985-06-01), Allison
patent: 5671851 (1997-09-01), Johnson et al.
patent: 5738800 (1998-04-01), Hosali et al.
patent: 5759917 (1998-06-01), Grover et al.
patent: 5770103 (1998-06-01), Wang et al.
patent: 6019806 (2000-02-01), Sees et al.
patent: 6042741 (2000-03-01), Hosali et al.
patent: 6114249 (2000-09-01), Canaperi et al.
patent: 6132637 (2000-10-01), Hosali et al.
patent: 6218305 (2001-04-01), Hosali et al.
patent: 6238494 (2001-05-01), Segal
patent: 6410444 (2002-06-01), Kido et al.
patent: 6436835 (2002-08-01), Kido et al.
patent: 6443811 (2002-09-01), Nojo et al.
patent: 6471735 (2002-10-01), Misra et al.
patent: 6544892 (2003-04-01), Srinivasan et al.
patent: 6616514 (2003-09-01), Edelbach et al.
patent: 2002/0142600 (2002-10-01), Jacquinot et al.
patent: 2002/0195421 (2002-12-01), Srinivasan et al.
patent: 2003/0006397 (2003-01-01), Srinivasan et al.
patent: 2003/0171072 (2003-09-01), Ward et al.
patent: 846740 (1988-06-01), None
patent: 1116762 (2001-07-01), None
patent: 1160300 (2001-12-01), None
Zhao et al, “Direct CMP for STI”, Semiconductor International (2001) pp. 145-150.
Bonner et al, “Improved Direct Polish STI CMP Process with High Selectivity Slurry:Reduced Microscratching & Increased Productivity”, Proceedings of 2002 CMP-MIC, pp 247-254.
Garliardi et al, “Fixed Abrasives and Selective Chemistries:Some Real Advantages for Direct STI CMP”, Proceedings of 2002 CMP-MIC, pp 288-290.
Tseng et al., “STI CMP Process with High—Selectivity Slurry”, Proceedings of 2002 CMP-MIC, pp. 255-259.
Leduc et al, “CMP:Aiming for Perfect Planarization”, Proceedings of 2002 CMP-MIC, pp 239-246.
Devriendt et al, “Challenges for the Integration of Shallow Trench Isolation”, Proceedings of 2003 CMP-MIC, pp 492-500.
Cook, “Chemical Processes in Glass Polishing”, Journal of Non-Crystalline Solids (1990) pp 152-171.
Lo et al, “Characterization of Selective-CMP, Dummy Pattern and Reverse Mask Approaches in STI Planarization Process”, Proceedings of 1999 CMP-MIC, pp-333-335.
Lee et al., “The Effects of Slurries with Pattern Size and Step Height in Shallow Trench Isolation Chemical Mechanical Polishing”, Proceedings of 2000 CMP-MIC, pp 288-290.
Jin et al., “Advanced Front End CMP and Integration Solutions”, Proceedings of 2000 CMP-MIC, pp 119-129.
Bonner et al., “Development of a Direct Polish Process for Shallow Trench Isolation Modules”, Proceedings of 2001 CMP-MIC, pp. 572-579.
Xiao, “Introduction to Semiconductor Manufacturing Technology”, Prentice-Hall Inc. (2001) pp. 384.
Nickles et al., “Meeting the Challenges of STI CMP”, Nanochip Technology Journal (2003) pp. 42-45.
Lampara et al., “A High Oxide—Nitride Selectivity CMP Slurry for Shallow Trench Isolation”, Electrochemical Society Proceedings, vol. 98-7, pp 218-234.

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