High selectivity and high planarity dielectric polishing

Details High selectivity and high planarity dielectric polishing High selectivity and high planarity dielectric polishing

2005-03-15

2005-03-15

Vinh, Lan (Department: 1765)

Compositions

Etching or brightening compositions

C252S079400, C438S692000

Reexamination Certificate

active

06866793

ABSTRACT:
A slurry includes a plurality of particles and at least one selective adsorption additive. The particles are preferably composite particles including a core surrounded by a shell provided by the selective adsorption additive. The slurry can be used to polish a structure including silicon dioxide or a low K dielectric film and a silicon nitride containing film, such as to form a shallow trench isolation (STI) structure or a metal-dielectric structure. The silicon nitride containing film surface substantially adsorbs the selective adsorption additive, whereas the silicon dioxide or low K dielectric film shows non-substantial adsorption characteristics to the adsorption additive. In another embodiment of the invention, silicon dioxide or low K dielectric film shows non-substantial adsorption of the selective adsorption additive at a pressure above a predetermined first pressure, and substantial adsorption of the selective adsorption additive for pressures below a predetermined second pressure, where the first pressure is greater than the second pressure.

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Rosen, M., “Surfactants and Interfacial Phenomena,” Second Edition, 1998, pp. 3-32, 52-54, 72-80, 122-132, and 388-401.

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