Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2007-02-27
2007-02-27
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S173000, C257S177000, C438S749000, C438S750000
Reexamination Certificate
active
10368016
ABSTRACT:
A high reverse voltage diode includes a hetero junction made up from a silicon carbide base layer, which constitutes a first semiconductor base layer, and a polycrystalline silicon layer, which constitutes a second semiconductor layer, and whose band gap is different from that of the silicon carbide base layer. A low concentration N type polycrystalline silicon layer is deposited on a first main surface side of the silicon carbide base layer, and a metal electrode is formed on a second main surface side of the silicon carbide base layer which is opposite to the first main surface side thereof.
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Partial English translation of Japanese application No. 9-172159.
Hayashi Tetsuya
Hoshi Masakatsu
Kaneko Saichirou
Mihara Teruyoshi
Shimoida Yoshio
McDermott Will & Emery LLP
Nissan Motor Co,. Ltd.
Owens Douglas W.
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