High reverse voltage semiconductor device with fast recovery tim

Details High reverse voltage semiconductor device with fast recovery tim High reverse voltage semiconductor device with fast recovery tim

1978-12-05

1981-03-10

James, Andrew J.

357 52, 357 55, 357 13, H01L 2912, H01L 2990, H01L 2934

Patent

active

042557577

ABSTRACT:
A high voltage, fast recovery time P-I-N diode is described in which the wafer used to form the device has a central depression. The central depression causes avalanche breakdown to occur preferably at the center of the device and through the bulk of the device rather than at the device edge which could irreversibly damage the device. The central depression also distorts the electric field lines as they terminate on the device edge so that they are more linearly distributed along the edge, thereby increasing the ability of the device to withstand breakdown at the edge of the device.

REFERENCES:
patent: 3449826 (1969-06-01), Eugster
patent: 3489958 (1970-01-01), Gramberg et al.
patent: 3506892 (1970-04-01), Adam
patent: 3519506 (1970-07-01), Topas
patent: 3575644 (1971-04-01), Huth
patent: 3656228 (1972-04-01), Glass
patent: 4047196 (1977-09-01), White et al.
patent: 4092663 (1978-05-01), Schafer

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