Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1989-12-14
1993-08-17
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257487, 257583, 257655, H01L 2910, H01L 2974, H01L 29747, H01L 2978
Patent
active
052371832
ABSTRACT:
The reverse breakdown voltage of a conventional insulated gate transistor is greatly increased by the addition of a lightly doped layer between the substrate and a buffer layer of the insulated gate transistor. The addition of the lightly doped layer does not increase the on resistance of the device, nor the cut-off time of the device. The lightly doped layer can be provided as an epitaxial layer along with the other epitaxial layers of the insulated gate transistor.
REFERENCES:
patent: 4364073 (1982-12-01), Becke et al.
patent: 4920062 (1990-04-01), Tsunoda
patent: 5031009 (1991-07-01), Fujihira
patent: 5068704 (1991-11-01), Nakagawa et al.
Device Electronics for IC's, 2nd Edition, Richard S. Muller, Theodore I. Kamins, 1982.
IBM Technical Disclosure Bulletin, vol. 19 #8 Jan. 1977.
Boland Bernard W.
Fay Gary V.
Barbee Joe E.
Fahmy Wael
Hille Rolf
Jackson Miriam
Motorola Inc.
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