High responsivity ultraviolet gallium nitride detector

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure

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257201, 257453, 257441, 437 5, H01L 2714

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active

052784355

ABSTRACT:
The invention is an Al.sub.x Ga.sub.1-x N ultraviolet detector with extremely high responsivity at over 200 to 365 nanometers and a very sharp long wavelength cutoff. The active layer for the sensors is a single crystal Al.sub.x Ga.sub.1-x N preferably deposited over a basal plane sapphire substrate using a switched atomic layer epitaxy process.

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