High resolution X-ray mask having high aspect ratio absorber pat

Details High resolution X-ray mask having high aspect ratio absorber pat High resolution X-ray mask having high aspect ratio absorber pat

1991-01-25

1993-01-12

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 14, 430 15, 430323, 427 44, 427160, G03F 900, B05B 500

Patent

active

051789752

ABSTRACT:
A technique for making a high resolution X-ray mask with high aspect ratio absorber patterns sufficient for use in X-ray lithography wherein a thin resist layer is used to provide a low contrast mask, and then an X-ray exposure is used to increase the aspect ratio of the absorber to increase the contrast of the mask. The mask is first patterned with an e-beam resist exposure and development step, and the plating of the base material is activated by a reactive ion etch followed by electroplating. The resist is removed and the mask is coated with a negative acting X-ray resist. The back of the mask is exposed to X-rays wherein the existing absorber acts as an X-ray mask to expose the desired areas of the resist. The resist is removed after development, reactive ion etching and electroplating resulting in a mask with high contrast.

REFERENCES:
patent: 4018938 (1977-04-01), Feder et al.
patent: 4035522 (1977-07-01), Hatzakis
patent: 4328298 (1982-05-01), Nester
patent: 4329410 (1982-05-01), Buckley
patent: 4702995 (1987-10-01), Okada
patent: 4873162 (1989-10-01), Yoshioka et al.

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