High-resolution sputter etching

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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156 7, 156 8, C23C 1500

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active

039752526

ABSTRACT:
High-resolution sputter etching of a relatively thick layer (of, for example, gold) by directly utilizing a relatively thin layer of resist as a sputter-etching mask is often not feasible. In such a case, it is known to use a sputter-etching mask made of an etch-resistant material such as titanium interposed between the resist and the relatively thick layer. In accordance with the invention, patterning of the titanium is achieved by a technique of sputter etching in a halocarbon atmosphere.

REFERENCES:
patent: 3477936 (1969-11-01), Gillery et al.
patent: 3615956 (1971-10-01), Irving et al.
patent: 3649503 (1972-03-01), Terry
patent: 3795557 (1974-03-01), Jacob
patent: 3836446 (1974-09-01), Tiefert
patent: 3880684 (1975-04-01), Abe
patent: 3918149 (1975-11-01), Roberts
patent: 3923568 (1975-12-01), Bersin
patent: 3930913 (1976-01-01), Jacob
patent: 3940506 (1976-02-01), Heinecke
Maissel et al. "Handbook of Thin-Film Technology", Mc-Graw-Hill, 1970, pp. 4-32.

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