High resolution printing technique by using improved mask patter

Details High resolution printing technique by using improved mask patter High resolution printing technique by using improved mask patter

1995-05-31

1996-08-13

Lerner, Martin

Optical: systems and elements

Diffraction

Using fourier transform spatial filtering

355 53, 359564, 378 34, 430 5, G02B 2746, G03B 2742, G21K 500, G03F 900

Patent

active

055462251

ABSTRACT:
In a method of manufacturing a lithographic mask by generating a plurality of light-shielding or transparent pattern elements with respect to a predetermined energy beam on a predetermined original plate on the basis of design data defining shapes and layout of the respective pattern elements, it is determined whether an outer edge of a specific pattern element of a predetermined width or less in the plurality of pattern elements is spaced apart from other pattern elements adjacent thereto by a predetermined distance or more. The design data is corrected so as to complementarily expand the outer edge portion of the specific pattern element outward from other outer edge portions by a small amount when the outer edge portion of the specific pattern element is spaced apart from the other pattern elements by the predetermined distance or more. The plurality of pattern elements are generated on the original plate on the basis of the corrected design data.

REFERENCES:
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Terasawa et al, "Submicron Photolithography using Phase-Shifting Mask", Papers of the Institute of Applied Physics, 1988 Autumn Meeting, p. 497.
Terasawa et al, "0.3-micron optical lithography using a phase-shifting mask", SPIE vol. 1088 Optical/Laser Microlithography II (1989), pp. 25-33.
Patent Abstracts of Japan, vol. 13, No. 242 (P-880) Jun. 7, 1989.
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