Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-05-11
2008-08-26
Vinh, Lan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S706000, C438S725000, C430S311000, C430S312000
Reexamination Certificate
active
07416991
ABSTRACT:
A method for patterning and forming very small structures on a substrate such as a wafer. The process uses a difference in surface energy between a mask and the substrate to selectively deposit a hard mask material such as a metal onto the surface of the substrate. The mask can be formed extremely thin, such as only an atomic mono-layer thick, and can be patterned by ion beam photolithography. The pattern can, therefore, be formed with extremely high resolution. The thin mask layer can be constructed of various materials and can be constructed of perfluorpolyether diacrylate (PDA), which can be dip coated to and exposed to form a desirable positive photoresist mask layer.
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Bandic Zvonimir Z.
Knigge Bernhard E.
Mate Charles Mathew
Hitachi Global Storage Technologies Netherlands B. V.
Vinh Lan
Zilka-Kotab, PC
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